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RMPA27000
June 2004
RMPA27000
27-29 GHZ 1.8 Watt Power Amplifier MMIC
General Description
The Fairchild Semiconductor's RMPA27000 is a high efficiency power amplifier designed for use in point to point and point to multi-point radios, and various communications applications. The RMPA27000 is a 3-stage GaAs MMIC amplifier utilizing our advanced 0.15m gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.
Features
* 18dB small signal gain (typ.) * 32.5dBm saturated power out (typ.) * DC Bias connections on top or bottom side * Circuit contains individual source vias * Chip size 4.00mm x 2.98mm
Device
Absolute Ratings
Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+5V Typical) Negative DC Voltage Simultaneous (Vd-Vg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 +8 2450 +22 -30 to +85 -55 to +125 5.6 Units V V V mA dBm C C C/W
(c)2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
RMPA27000
Electrical Characteristics (At 25C), 50 system, Vd = +5V, Quiescent current (Idq) = 1500mA
Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal (Pin = 0dBm) Gain Variation vs. Frequency Power Output at 1dBm Compression Power Output Saturated: (Pin = +19dBm) Drain Current at Pin = 0dBm Drain Current at P1dB Compression Power Added Efficiency (PAE): at P1dB OIP3 (16dBm/Tone) Input Return Loss (Pin = 0dBm) Output Return Loss (Pin = 0dBm)
Note: 1. Typical range of negative gate voltages is -1.0 to 0.0V to set typical Idq of 1500 mA.
Min 27 16
Typ -0.2 18 0.5 32.5 32.5 1500 1780 20 38 6 10
Max 29
32
Units GHz V dB dB dBm dBm mA mA % dBm dB dB
(c)2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
RMPA27000
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3mils wide and 0.5mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2mil gap between the chip and the substrate material.
GATE SUPPLY (Vg)
MMIC CHIP
RF IN
RF OUT
GROUND (Back of the Chip)
DRAIN SUPPLY (Vd)
Figure 1. Functional Block Diagram
2.997 2.812 2.714
1.692 1.492 1.292
0.270 0.172 0.0 0.0 0.454 Dimensions in mm 1.422 2.513 3.891 4.000
Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 4.000mm x 2.997mm x 50m Typical. Back of chip is RF and DC Ground)
(c)2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
RMPA27000
GATE SUPPLY (-Vg) 0.1F
100pF BOND WIRE Ls
MMIC CHIP
RF IN
RF OUT
100pF GROUND (Back of Chip) 0.01F
100pF
100pF BOND WIRE Ls
0.01F
0.01F
DRAIN SUPPLY (Vd = +5V)
Figure 3. Chip Layout on Bond Pad Locations
(c)2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
RMPA27000
DIE-ATTACH 80Au/20Sn 2 MIL GAP
5 MIL THICK ALUMINA 50
5 MIL THICK ALUMINA 50
RF INPUT
RF OUTPUT
100pF
100pF
100pF
100pF L < 0.015" (4 Places)
0.01F
0.01F
0.01F
0.01F
Vg (NEGATIVE)
Vd (POSITIVE)
MMIC has Vg and Vd bias pads accessible on both top and bottom sides. DC bias connections are required only on one side. Note: Use 0.003" by 0.0005" Gold Ribbon or 1 mil gold wire for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Figure 4. Recommended Assembly and Bonding Diagram
(c)2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
RMPA27000
Recommended Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier. Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the grounds of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +5V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 1500mA. Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg).
(c)2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
RMPA27000
Typical Characteristics
RMPA27000 S21, S11, S22 Mag. vs. Frequency Bias Vd = 5V, Idq = 1500mA, T=25C
25 20 15 S21, S11, S22 (dB) 10 5 0 -5 -10 -15 -20 20 22 24 26 28 30 32 34 36 FREQUENCY (GHz) S22 S11 S21
RMPA27000 P1dB vs. Frequency Vd = 5V, Idq = 1500mA
32.5
32.0 P1dB (dBm)
31.5
31.0
30.5
30.0 26 27 28 29 30 31
FREQUENCY (GHz)
RMPA27000 Power Out vs. Power In Vd = 5V, Idq = 1500mA, T=25C
34 32 30 28 26 27 GHz 24 22 28 GHz 20 18 16 14 12 10 0 2
29 GHz
30 GHz
Pout (dBm)
4
6
8
10
12
14
16
18
20
Pin (dBm)
(c)2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
RMPA27000
Typical Characteristics (Continued)
RMPA27000 Gain vs. Power In Vd = 5V, Idq = 1500mA, T=25C
20 19 18 17 GAIN (dBm) 16 15 14 13 12 11 10 0 2 4 6 8 10 Pin (dBm) 12 14 16 18 20
27 GHz 29 GHz 28 GHz
30 GHz
RMPA27000 Two-Tone OIP3 vs. Output Power/tone Vd = 5V, Idq = 1500mA, T=25C
44 42 29 GHz 40 OIP3L (dBm) 38 27 GHz 36 34 32 30 28 26 10 12 14 16 18 20 22 24 26 28 30 OUTPUT POWER/TONE (dBm)
28 GHz 30 GHz
(c)2004 Fairchild Semiconductor Corporation
RMPA27000 Rev. D
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11

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